1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R
θJ-A
................................................ 150°C/W
CerDIP R
θJ-C
.................................................. 50°C/W
PDIP R
θJ-A
................................................... 125°C/W
PDIP R
θJ-C
..................................................... 42°C/W
SOIC R
θJ-A
................................................... 155°C/W
SOIC R
θJ-C
..................................................... 45°C/W
PIN CONFIGURATIONS
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
NC 1
IN A 2
GND 3
IN B 4
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T
A
≤
70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
8 NC
7 OUT A
NC 1
IN A 2
GND 3
IN B 4
2
7
8 NC
7 OUT A
TC4426
6 V
DD
5 OUT B
TC4427
6 VDD
5 OUT B
TC4428
6 VDD
5 OUT B
2,4
7,5
2,4
7,5
4
5
INVERTING
NC = NO INTERNAL CONNECTION
NOTE:
SOIC pinout is identical to DIP.
NONINVERTING
DIFFERENTIAL
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
2.4
—
–1
V
DD
– 0.025
—
—
—
> 0.5
—
—
—
—
—
7
1.5
—
—
0.8
1
—
0.025
10
—
—
V
V
µA
V
V
Ω
A
A
Parameter
Test Conditions
Min
Typ
Max
Unit
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
= 18V, I
O
= 10 mA
Duty Cycle
≤
2%, t
≤
30
µsec
Duty Cycle
≤
2%
t
≤
30
µsec
Figure 1
Figure 1
Figure 1
Figure 1
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
19
19
20
40
—
—
30
30
30
50
4.5
0.4
nsec
nsec
nsec
nsec
mA
mA
Power Supply
I
S
NOTE:
1. Switching times are guaranteed by design.
4-246
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
