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TC4423EOE 参数 Datasheet PDF下载

TC4423EOE图片预览
型号: TC4423EOE
PDF下载: 下载PDF文件 查看货源
内容描述: 3A双高速功率MOSFET驱动器 [3A DUAL HIGH-SPEED POWER MOSFET DRIVERS]
分类和应用: 驱动器接口集成电路光电二极管
文件页数/大小: 7 页 / 87 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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3A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4423
TC4424
TC4425
TYPICAL CHARACTERISTICS
(Cont.)
Propagation Delay Time vs. Supply Voltage
50
C LOAD = 2200 pF
1
Delay Time vs. Temperature
50
C LOAD = 2200 pF
2
3
45
DELAY TIME (nsec)
DELAY TIME (nsec)
40
35
30
25
20
4
6
8
10
12
VDD
14
16
18
tD2
tD2
45
tD2
40
35
30
25
20
–55 –35 –15
tD2
5
25 45
TA (°C)
65
85
105 125
Quiescent Current vs. Supply Voltage
1.4
TA = +25°C
1
IQUIESCENT (mA)
Quiescent Current vs. Temperature
1.2
IQUIESCENT (mA)
4
5
BOTH INPUTS = 1
1.0
0.8
0.6
0.4
0.2
INPUTS = 0
5
25 45
TA (°C)
65
85
105 125
INPUTS = 1
0.1
BOTH INPUTS = 0
0.01
4
6
8
10
VDD
12
14
16
18
0.0
–55 –35 –15
Output Resistance (Output High)
vs. Supply Voltage
14
12
WORST CASE @ TJ = +150°C
RDS(ON) (Ω)
RDS(ON) (Ω)
Output Resistance (Output Low)
vs. Supply Voltage
14
12
WORST CASE @ TJ = +150°C
10
8
6
4
2
TYP @ TA = +25°C
6
7
10
8
6
4
2
4
6
8
10
VDD
12
14
16
18
TYP @ TA = +25°C
4
6
8
10
12
VDD
14
16
18
8
4-241
TELCOM SEMICONDUCTOR, INC.