6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
IH
V
IL
V
IN
(Max)
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Voltage Range
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Operating Input Voltage
2.4
—
–5
– 10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
4.5
—
—
—
—
—
—
3
2.3
32
34
50
65
0.45
60
—
—
0.8
V
DD
+ 0.3
10
—
0.025
5
5
60
60
100
100
3
400
18
V
V
V
µA
V
V
Ω
Ω
nsec
nsec
nsec
nsec
mA
µA
V
1
Measured over operating temperature range with 4.5V
≤
V
DD
≤
18V,
unless otherwise specified.
Test Conditions
Min
Typ
Max
Unit
Parameter
2
3
4
5
0V
≤
V
IN
≤
V
DD
See Figure 1
See Figure 1
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Figure 1, C
L
= 2500 pF
Figure 1, C
L
= 2500 pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Output
V
OH
V
OL
R
O
R
O
t
R
t
F
t
D1
t
D2
Switching Time
(Note 1)
Power Supply
I
S
V
DD
NOTE:
1. Switching times guaranteed by design.
VDD = 18V
1µF
1
0.1µF
2
6
7
TC4429
4
5
CL = 2500pF
8
0.1µF
0V
INPUT
OUTPUT
+18V
OUTPUT
0V
10%
INPUT:
100 kHz, square wave,
t
RISE
= t
FALL
≤
10 nsec
+5V
INPUT
10%
tD1
90%
tF
90%
6
tR
90%
10%
tD2
7
Figure 1. Switching Time Test Circuit
8
TELCOM SEMICONDUCTOR, INC.
4-227
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
