1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS
TC4404
TC4405
ELECTRICAL CHARACTERISTICS:
Specifications measured over operating temperature range
with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Min
2.4
—
– 10
V
DD
– 0.025
—
—
—
—
>500
1
Symbol
Input
V
IH
V
IL
I
IN
Parameter
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
Test Conditions
Typ
—
—
—
—
—
9
1.5
—
—
Max
—
0.8
10
—
0.025
12
—
100
—
Unit
V
V
µA
V
V
Ω
A
mA
mA
2
3
4
5
6
7
– 0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
R
High Output Voltage
Low Output Voltage
Output Resistance
I
OUT
= 10 mA, V
DD
= 18V; Any Drain
Peak Output Current (Any Drain) Duty cycle <2%, t
≤
300µsec
Continuous Output Current (Any Drain)
Latch-Up Protection (Any Drain) Duty cycle <2%, t
≤
300µsec
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
1. Switching times guaranteed by design.
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
I
S
NOTE
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
Figure 1, C
L
= 1000 pF
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
—
—
—
—
—
—
—
—
—
—
—
—
40
40
40
60
8
0.6
nsec
nsec
nsec
nsec
mA
Power Supply
Circuit Layout Guidelines
Avoid long power supply and ground traces (added
inductance causes unwanted voltage transients). Use power
and ground planes wherever possible. In addition, it is
advisable that low ESR bypass capacitors (4.7µF or 10µF
PIN CONFIGURATIONS (DIP AND SOIC)
VDD
IN A
IN B
COM
VDD
IN A
IN B
COM
tantalum) be placed as close to the driver as possible. The
driver should be physically located as close to the device it
is driving as possible to minimize the length of the output
trace.
1
2
3
4
TC4404
8
7
6
5
A TOP
A BOTTOM
B TOP
B BOTTOM
1
2
3
4
TC4404
8
7
6
5
A TOP
A BOTTOM
B TOP
B BOTTOM
VDD
IN A
IN B
COM
1
2
3
4
TC4405
8
7
6
5
A TOP
A BOTTOM
B TOP
B BOTTOM
VDD
IN A
IN B
COM
1
2
3
4
TC4405
8
7
6
5
A TOP
A BOTTOM
B TOP
B BOTTOM
8
4-221
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
