6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
TC429
ELECTRICAL CHARACTERISTICS:
Over operating temperature with 7V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
2.4
—
– 10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
—
—
0.8
10
—
0.025
5
5
V
V
µA
V
V
Ω
1
Parameter
Test Conditions
Min
Typ
Max
Unit
2
3
4
5
6
7
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
V
IN
= 0.8V,
I
OUT
= 10 mA, V
DD
= 18V
V
IN
= 2.4V,
I
OUT
= 10 mA, V
DD
= 18V
Figure 1, C
L
= 2500pF
Figure 1, C
L
= 2500pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Switching Time (Note 1)
t
R
t
F
t
D1
t
D2
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
1. Switching times guaranteed by design.
—
—
—
—
—
—
—
—
—
—
—
—
70
70
100
120
12
1
nsec
nsec
nsec
nsec
mA
Power Supply
I
S
NOTE:
SWITCHING SPEED
VDD = 18V
1
µF
1
8
0.1
µF
INPUT
2
6
7
OUTPUT
CL= 2500 pF
TC429
4
5
INPUT: 100 kHz, square wave
tRISE = tFALL
≤
10 nsec
+5V
INPUT
0V
18V
OUTPUT
0V
10%
10%
tD1
90%
tF
90%
tD2
tR
90%
10%
Figure 1. Inverting Driver Switching Time Test Circuit
8
4-177
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
