6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
TC429
TYPICAL CHARACTERISTICS
Rise/Fall Times vs. Supply Voltage
60
TA = +25°C
CL = 2500pF
Rise/Fall Times vs. Temperature
60
CL = 2500pF
VDD = +15V
Rise/Fall Times vs. Capacitive Load
100
TA = +25°C
VDD = +15V
TIME (nsec)
50
TIME (nsec)
50
TIME (nsec)
tF
tR
40
40
tF
10
30
tF
tR
30
tR
20
20
10
5
10
15
SUPPLY VOLTAGE (V)
20
10
–50 –25
0
25 50
75
100 125 150
TEMPERATURE (°C)
1
100
1K
CAPACITIVE LOAD (pF)
10K
Supply Current vs. Capacitive Load
70
60
50
40
30
20
Delay Times vs. Temperature
90
Delay Times vs. Supply Voltage
140
TA = +25°C
CL = 2500pF
SUPPLY CURRENT (mA)
TA = +25°C
VDD = +15V
DELAY TIME (nsec)
70
tD2
DELAY TIME (nsec)
80
CL = 2500pF
VDD = +15V
120
100
400kHz
200kHz
60
80
tD2
50
tD1
60
tD1
10
0
10
20kHz
100
1K
CAPACITIVE LOAD (pF)
10K
40
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
40
5
10
15
SUPPLY VOLTAGE (V)
20
Supply Current vs. Frequency
50
TA = +25°C
CL = 2500 pF
SUPPLY CURRENT (mA)
Supply Current vs. Supply Voltage
4
SUPPLY CURRENT (mA)
Supply Current vs. Temperature
4
SUPPLY CURRENT (mA)
40
15V
30
VDD = 18V
10V
TA = +25°C
RL =
∞
INPUT LOGIC "1"
VDD = +18°C
RL =
∞
INPUT LOGIC "1"
2
20
3
10
5V
0
1
10
100
FREQUENCY (kHz)
1K
0
4
8
12
16
SUPPLY VOLTAGE (V)
20
2
–75
–50
–25
0 25
50
75
100
125
150
TEMPERATURE (°C)
Voltage Transfer Characteristics
20
TA = +25°C
HYSTERESIS
310mV
15
High Output Voltage vs. Current
400
TA = +25°C
Low Output Voltage vs. Current
400
TA = +25°C
OUTPUT VOLTAGE (mV)
OUTPUT VOLTAGE (V)
300
VDD = 5V
200
OUTPUT VOLTAGE (mV)
300
VDD = 5V
200
10V
100
18V
15V
300mV
10
200mV
5
10V
15V
100
18V
0
0.25 0.50 0.75 1 1.25 1.50 1.75 2
INPUT VOLTAGE (V)
0
20
40
60
80
CURRENT SOURCED (mA)
100
0
20
40
60
80
CURRENT SUNK (mA)
100
4-180
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
