6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
TC429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal ..... V
DD
+0.3V to GND – 0.3V
Power Dissipation (T
A
≤
70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
Derating Factors
Plastic DIP ............................ 5.6 mW/°C Above 36°C
CerDIP ...................................................... 6.4 mW/°C
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V
IH
V
IL
I
IN
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
T
A
= +25°C with 7V
≤
V
DD
≤
18V, unless otherwise specified.
Test Conditions
Min
2.4
—
– 10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
—
Parameter
Typ
1.8
1.3
—
—
—
1.8
1.5
6
23
25
53
60
3.5
0.3
Max
—
0.8
10
—
0.025
2.5
2.5
—
35
35
75
75
5
0.5
Unit
V
V
µA
V
V
Ω
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
I
PK
t
R
t
F
t
D1
t
D2
Peak Output Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
V
IN
= 0.8V,
I
OUT
= 10mA, V
DD
= 18V
V
IN
= 2.4V,
I
OUT
= 10mA, V
DD
= 18V
V
DD
= 18V (See Figure 3)
Figure 1, C
L
= 2500pF
Figure 1, C
L
= 2500pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
A
nsec
nsec
nsec
nsec
mA
Switching Time (Note 1)
Power Supply
I
S
NOTES:
1. Switching times guaranteed by design.
4-176
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
