1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC426
TC427
TC428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal .... V
DD
+ 0.3V to GND – 0.3V
Power Dissipation (T
A
≤
70°C)
Plastic ...............................................................730mW
CerDIP ..............................................................800mW
SOIC .................................................................470mW
Derating Factor
Plastic ............................................................. 8mW/°C
CerDIP ......................................................... 6.4mW/°C
SOIC ............................................................... 4mW/°C
Operating Temperature Range
C Version ................................................. 0°C to +70°C
I Version .............................................. – 25°C to +85°C
E Version ............................................ – 40°C to +85°C
M Version .......................................... – 55°C to +125°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Min
2.4
—
–1
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
10
6
1.5
—
—
—
—
—
—
Max
—
0.8
1
—
0.025
15
10
—
30
30
50
75
8
0.4
Unit
V
V
µA
V
V
Ω
Ω
A
nsec
nsec
nsec
nsec
mA
mA
ELECTRICAL CHARACTERISTICS:
Symbol
Parameter
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
High Output Resistance
Low Output Resistance
Peak Output Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Test Conditions
Input
V
IH
V
IL
I
IN
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
OH
R
OL
I
PK
t
R
t
F
t
D1
t
D2
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Switching Time
(Note 1)
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Power Supply
I
S
ELECTRICAL CHARACTERISTICS:
Input
V
IH
V
IL
I
IN
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
High Output Resistance
Low Output Resistance
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Over Operating Temperature Range with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
2.4
—
–10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
8
—
—
—
—
—
—
—
0.8
10
—
0.025
20
15
60
30
75
120
12
0.6
V
V
µA
V
V
Ω
Ω
nsec
nsec
nsec
nsec
mA
mA
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
OH
R
OL
t
R
t
F
t
D1
t
D2
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
Test Figure 1/2
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Switching Time
(Note 1)
Power Supply
I
S
NOTE:
1. Switching times guaranteed by design.
4-170
TELCOM SEMICONDUCTOR, INC.