BICMOS PWM CONTROLLERS
TC25C25
TC35C25
ELECTRICAL CHARACTERISTICS:
Unless otherwise stated, these specifications apply for – 40°C < T
A
<
+85°C for the TC25C25Exx; and 0°C <T
A
< +70°C for the TC35C25Cxx;
V
IN
and V
DD
= 16V; R
T
= 3.7kΩ; C
T
= 1000 pF; RD = 760
Ω.
Parameter
Supply Voltage Rejection
Slew Rate
Threshold Hysteresis
1
2
3
4
5
6
7
Test Conditions
V
IN
= 8V to 18V
C
LOAD
= 50pF, ACL = 1
V(EA+) = 1V to 3V Pulse, (Note 1)
Min
90
—
—
0.6
—
—
Typ
120
1
—
0.8
1.2
250
—
49
0.6
3.6
—
46
30
±1
20
140
2.4
13
20
55
40
2
7
2.2
75
Max
—
—
—
1
2.5
350
0
—
0.7
3.7
±1
75
100
±100
40
220
3
25
35
80
65
3
7.3
2.5
200
Units
dB
V/µsec
V
mA
µA
%
%
V
V
µA
µA
mV
nA
nsec
nsec
V
Ω
Ω
nsec
nsec
mA
V
V
µA
Total Standby Current
Supply Current
Start-Up Current
PWM Comparator
Min. Duty Cycle
Max Duty Cycle
Input Threshold
Input Threshold
Input Bias Current
Note 1, T
J
= 25°C
T
J
= 25°C, f
OSC
= 100kHz, (Note 1)
V(C
T
) = 0.6V
V(C
T
) = 3.6V
Note 1, T
J
= 25°C
V
SHUTDOWN
= 0V
V
SHUTDOWN
= 3V
V
SHUTDOWN
= 3V
V
SHUTDOWN
= 5V, (Note 1)
V
SHUTDOWN
= 5V, (Note 1)
—
45
0.5
3.4
—
30
—
—
—
130
1.5
—
—
—
—
—
6.45
1.7
—
Soft Start Section
Soft Start Current
Soft Start Voltage
Shutdown Input Current
Min Shutdown Pulse Width
Shutdown Delay
Shutdown Threshold
Output Drivers (each output)
Output Low Level RDS (ON)
Output High Level RDS (ON)
Rise Time
Fall Time
I
SINK
= 20mA
I
SOURCE
= 20mA
C
L
= 1
nF
, (Note 1)
C
L
= 1
nF
, (Note 1)
f
OSC
= 100kHz
Power Supply
Supply Current
UV Lockout Threshold
UV Lockout Hysteresis
Start-up Current
NOTE:
1. Not Tested.
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of
any circuits described herein and makes no representations that they are free from patent infringement.
8
TELCOM SEMICONDUCTOR, INC.
4-113
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
