BICMOS PWM CONTROLLERS
TC25C25
TC35C25
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................18V
Maximum Chip Temperature ................................... 150°C
Storage Temperature ............................ – 65°C to +150°C
Lead Temperature (10 sec) ..................................... 300°C
Package Thermal Resistance
PDIP R
θJ-A
.....................................................................
125°C/W
PDIP R
θJ-C
........................................................................
45°C/W
SOIC R
θJ-A
.....................................................................
250°C/W
SOIC R
θJ-A
........................................................................
75°C/W
Operating Temperature
25C2x ........................................ – 40°C
≤
T
A
≤
+85°C
35C2x ............................................. 0°C
≤
T
A
≤
+70°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
ELECTRICAL CHARACTERISTICS:
Unless otherwise stated, these specifications apply for – 40°C < T
A
<
+85°C for the TC25C25Exx; and 0°C <T
A
< +70°C for the TC35C25Cxx;
V
IN
and V
DD
= 16V; R
T
= 3.7kΩ; C
T
= 1000pF; RD = 760Ω.
Parameter
Reference Section
Output Voltage
Line Regulation
Load Regulation
Temp Coefficient
V
REF
Long Term Drift
Short Circuit
Output Noise
T
J
= 25°C, I
O
= 1mA
V
IN
= 8V to 18V
I
I
= 1mA to mA
Note 1
Worst Case
T
J
= 25°C, (Note 1)
V
REF
to GND
T
J
= 25°C, 10 Hz
≤
f
≥
10 kHz, (Note 1)
T
J
= 25°C, at 97 kHz
V
IN
= 8V to 18V
Note 1
T
J
= 25°C
f
osc
= 100kHz, R
L
= 1MΩ, (Note 1)
T
J
= 25°C, R
D
= 0Ω, (Note 1)
C
T
= 100pF, R
T
= 1Ω
R
T
Pin Tied to V
REF,
C
T
Pin at GND
Sync Voltage = 4V, V(R
T
) = 4V
T
J
= 25°C, Sync Amplitude = 5V, (Note 1)
R
T
= 1Ω, C
T
= 100pF, R
D
= 0Ω, (Note 1)
3.9
—
—
—
3.85
—
20
—
—
—
—
2.9
30
4.9
—
1.8
—
—
1.0
—
—
—
70
0.7
—
4.9
60
4
±4
±4
±0.01
4
±50
40
21
±2
±0.01
±0.025
3.2
50
5.5
170
2.2
—
130
—
±5
±50
±25
85
0.9
10
5.4
75
4.1
±10
±15
±0.4
4.15
—
70
—
±3
±0.1
±0.06
3.4
60
6.7
200
2.8
±1
175
—
±15
±200
±100
—
1.2
20
5.9
—
V
mV
mV
mV/°C
V
mV/1000Hrs
mA
µV(rms)
%
%/V
%/°C
V
Ω
V
nsec
V
µA
nsec
MHz
mV
pA
pA
dB
MHz
mV
V
dB
Test Conditions
Min
Typ
Max
Units
Oscillator Section
Initial Accuracy
Voltage Coefficient
Temp Coefficient
OSC Ramp Amplitude
Reset Switch R
DS (ON)
Clock Amplitude
Clock Min Width
Sync Threshold
Sync Input Current
Min Sync Pulse Width
Max OSC Freq
Input Offset Voltage
Input Bias Current
Input Offset Current
DC Open Loop Gain
Gain Bandwidth Product
Output Low Level
Output High Level
CMRR
4-112
Error Amplifier Section (V
CM
= 2.5V)
T
J
= 25°C
T
J
= 25°C
R
L
= 100kΩ
Note 1
R
L
= 100kΩ (N Channel)
R
L
= 100kΩ (NPN)
V
CM
= 0.5 to 4.7V
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
