1.2A DUAL HIGH-SPEED MOSFET DRIVERS
TC1426
TC1427
TC1428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
550
440
TIME (ns)
T
A
= +25°C
1
Fall Time vs. Supply Voltage
330
T
A
= +25°C
Delay Time vs. Supply Voltage
80
C = 1000pF
L
T
A
= +25°C
2
3
264
10,000pF
TIME (nsec)
70
TIME (nsec)
330
198
10,000pF
60
220
4700pF
110
2200pF
132
4700pF
66
2200pF
50
t
D1
40
t
D2
30
0
5
7
9
11
V
DD
(V)
13
15
0
5
7
9
11
V
DD
(V)
13
15
5
7
9
11
V
DD
(V)
13
15
4
500kHz
Rise and Fall Times vs. Temperature
40
Delay Time vs. Temperature
60
C = 1000pF
L
V
DD
= +15V
54
TIME (nsec)
Supply Current vs. Capacitive Load
30
C = 1000pF
L
V
DD
= 15V
T
A
= +25°C
C = 1000pF
L
V
DD
= +15V
32
TIME (nsec)
t
RISE
24
24
t
FALL
48
t
D2
SUPPLY CURRENT (mA)
18
200kHz
12
20kHz
6
0
5
6
7
16
42
t
D1
8
36
0
25
45
65
85
105
TEMPERATURE (°C)
125
0
25
45
65
85
105
TEMPERATURE (°C)
125
100
520
940 1360 1780
CAPACITIVE LOAD (pF)
2200
Rise Time vs. Capacitive Load
1000
T
A
= +25°C
Fall Time vs. Capacitive Load
1000
T
A
= +25°C
Supply Current vs. Frequency
100
C
L
= 1000pF
SUPPLY CURRENT (mA)
V
DD
= 15V
V
DD
= 10V
80
T
A
= +25°C
TIME (nsec)
TIME (nsec)
5V
DD
100
10 V
DD
100
10V
DD
5V
DD
60
40
15 V
DD
10
100
15V
DD
10
100
20
V
DD
= 5V
0
10
100
1000
FREQUENCY (kHz)
10,000
1000
10,000
CAPACITIVE LOAD (pF)
10,000
1000
CAPACITIVE LOAD (pF)
8
TELCOM SEMICONDUCTOR, INC.
4-211
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
