300mA CMOS LDO With Shutdown,
ERROR Output, And Bypass
TC1173
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .............................................................. 6.5V
Output Voltage ........................... (V
SS
– 0.3) to (V
IN
+ 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40°C < T
J
< 125°C
Storage Temperature ............................ – 65°C to +150°C
Maximum Voltage on Any Pin ............ V
IN
+0.3V to – 0.3V
Lead Temperature (Soldering, 10 Sec.) ................ +300°C
*Absolute Maximum Ratings indicate device operation limits beyond dam-
age may occur. Device operation beyond the limits listed in
Electrical
Characteristics
is not recommended.
ELECTRICAL CHARACTERISTICS:
V
IN
= V
OUT
+ 1V, I
L
= 0.1µA, C
L
= 3.3µF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
BOLDFACE
type specifications apply for junction temperatures of – 40°C to +125°C
Symbol
V
IN
I
OUT
MAX
V
OUT
∆V
OUT
/∆T
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
V
IN
– V
OUT
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage (Note 4)
Test Conditions
Min
—
300
—
V
R
- 2.5%
—
—
—
—
Typ
—
—
±
0.5%
—
40
0.05
0.5
20
80
240
50
0.05
60
550
0.04
260
Max
6.0
—
—
V
R
+ 2.5%
—
0.35
2.0
30
160
480
90
0.5
—
650
—
—
Units
V
mA
V
ppm/°C
%
%
mV
Note 1
Note 2
(V
R
+ 1V) < V
IN
< 6V
I
L
= 0.1mA to I
OUT
MAX
(Note 3)
I
L
= 0.1mA
I
L
= 100mA
I
L
= 300mA
SHDN = V
IH
SHDN = 0V
F
RE
≤
1kHz
V
OUT
= 0V
Note 5
F = 1kHz, C
OUT
= 1µF,
R
LOAD
= 50Ω
V
R
I
SS1
I
SS2
PSRR
I
OUT
SC
∆V
OUT
∆P
D
eN
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
—
—
—
—
—
—
µA
µA
dB
mA
V/W
nV/√Hz
SHDN Input
V
IH
V
IL
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
15
%V
IN
%V
IN
ERROR Output
V
MIN
V
OL
V
TH
V
OL
Minimum Operating Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
1mA Flows to ERROR
Note 7
1.0
—
—
—
—
—
0.95 x V
R
50
—
400
—
—
V
mV
V
mV
NOTES:
1. V
R
is the user-programmed regulator output voltage setting.
2. T
C
V
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x
∆T
3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA
to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential.
5. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10msec.
6. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature, and the
thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see
Thermal Considerations
section of this data sheet for more details.
7. Hysteresis voltage is referenced to V
R
.
TC1173-2
2/2/00
2
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
