PRELIMINARY INFORMATION
50mA ADJUSTABLE CMOS
LDO WITH SHUTDOWN
TC1070
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .................................................................7V
Output Voltage .................................. (– 0.3) to (V
IN
+ 0.3)
Power Dissipation .................... Internally Limited (Note 7)
Operating Temperature .................... – 40°C < T
J
< 125°C
Storage Temperature ............................ – 65°C to +150°C
Maximum Voltage on Any Pin ........... V
IN
+ 0.3V to – 0.3V
Lead Temperature (Soldering, 10 Sec.) ................ +260°C
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
V
IN
= V
OUT
+ 1V, I
L
= 0.1mA, C
L
= 3.3µF, SHDN > V
IH
, T
A
= 25
°
C, unless other-
wise specified.
BOLDFACE
type specifications apply for junction temperatures of
– 40°C to +125°C.
Symbol
V
IN
I
OUTMAX
V
OUT
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
Test Conditions
Min
Typ
—
—
V
R
±0.5%
Max
6.5
—
V
R
+ 2.5%
Units
V
mA
V
—
50
V
REF
≤
V
OUT
≤
(V
IN
–0.05)
V
R
– 2.5%
I
L
= 0
(Note 1)
—
V
REF
∆V
REF
/∆T
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
V
IN
– V
OUT
Reference Voltage
V
REF
Temperature Coefficient
Line Regulation
Load Regulation
Dropout Voltage (Note 4)
I
GND
I
IN
I
INSD
PSRR
I
OUTSC
∆V
OUT
/∆P
D
T
SD
∆T
SD
eN
Ground Pin Current
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
Note 2
(V
R
+ 1V) < V
IN
< 6V
I
L
= 0.1mA to I
OUTMAX
(Note 3)
I
L
= 0.1mA
I
L
= 20mA
I
L
= 50mA
(Note 4)
I
L
= I
OUTMAX,
(Note 5)
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
RE
≤
1kHz
V
OUT
= 0V
Note 6
—
—
—
—
1.23
40
0.05
0.5
5
65
95
0
50
—
64
200
0.04
160
10
260
—
—
—
—
—
V
ppm/°C
%/V
%
mV
I
L
= I
OUTMAX
470pF from Bypass to GND
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
—
—
—
—
—
—
—
—
—
—
—
0.05
—
450
—
—
—
—
µA
µA
µA
dB
mA
%/W
°C
°C
nV/√Hz
SHDN Input
V
IH
V
IL
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
15
%V
IN
%V
IN
TC1070-01
6/13/97
2
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
