Quadrac
Data Sheets
Part No.
Isolated
Trigger Diac Specifications (T–MT1)
I
V
I
V
TM
(1) (3)
∆VBO
(7)
VBO
(6)
[∆V
(6)
]
IBO
CT
(11)
T(RMS)
(5)
DRM
(1)
DRM
(1) (10)
T
MT1
MT2
mAmps
Volts
TC
=
TC
=
TC =
TO-220
Volts
Volts
Volts
Volts
µAmps
µFarads
25 °C
100 °C 125 °C
TC = 25 °C
See “Package Dimensions” section
for variations. (12)
MIN
200
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
200
400
600
400
600
MAX
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
MAX
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
MIN MAX
MIN
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAX
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
MAX
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Q2004LT
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
33
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
43
4 A
Q4004LT
Q6004LT
Q2006LT
Q4006LT
Q6006LT
Q4006LTH
Q6006LTH
Q2008LT
Q4008LT
Q6008LT
Q4008LTH
Q6008LTH
Q2010LT
Q4010LT
Q6010LT
Q4010LTH
Q6010LTH
Q2015LT
Q4015LT
Q6015LT
Q4015LTH
Q6015LTH
6 A
8 A
10 A
15 A
V
V
— Repetitive peak blocking voltage
— Peak on-state voltage at maximum rated RMS current
DRM
Specific Test Conditions
TM
[∆V±] — Dynamic breakback voltage (forward and reverse)
∆V — Breakover voltage symmetry
BO
General Notes
•
C
— Trigger firing capacitance
T
All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25 °C unless otherwise specified.
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
•
•
•
Operating temperature range (T ) is -40 °C to +125 °C.
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
J
Storage temperature range (T ) is -40 °C to +125 °C.
S
Lead solder temperature is a maximum of +230 °C for 10 seconds
maximum; ≥1/16" (1.59 mm) from case.
The case temperature (TC) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
2
I t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
— Peak breakover current
•
I
I
I
I
I
I
BO
— Peak off-state current gate open; VDRM = maximum rated value
— Peak gate trigger current (10 µs Max)
DRM
GTM
— Holding current; gate open
H
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1
(2) See Figure E3.1 for IH versus TC.
(3) See Figure E3.4 and Figure E3.5 for iT versus vT.
(4) See Figure E3.9 for surge ratings with specific durations.
— RMS on-state current, conduction angle of 360°
T(RMS)
— Peak one-cycle surge
TSM
t
— Gate controlled turn-on time
gt
V
— Breakover voltage (forward and reverse)
BO
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E3 - 2
©2002 Teccor Electronics
Thyristor Product Catalog
TECCOR [ TECCOR ELECTRONICS ]
