Alternistor Triacs
Data Sheets
Part Number
I
V
I
Isolated
Non-isolated
T(RMS)
(4)(16)
DRM
(1)
GT
(3) (7) (15) (17)
A
MT2
A
MT2
G
MT2
MT1
K
G
G
A
G
K
MT1
G
A
MT1
MT2
MT2
mAmps
TO-218
(16)
TO-263
D2Pak
T0-220
TO-218X
TO-220
Volts
QI
QII
MAX
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
QIII
MAX
See “Package Dimensions” section for variations. (11)
Q2016LH3
Q4016LH3
Q6016LH3
Q8016LH3
QK016LH3
Q2016LH4
Q4016LH4
Q6016LH4
Q8016LH4
QK016LH4
Q2016LH6
Q4016LH6
Q6016LH6
Q8016LH6
QK016LH6
Q2025L6
Q4025L6
Q6025L6
Q8025L6
QK025L6
Q2030LH5
Q4030LH5
Q6030LH5
Q2016RH3
Q4016RH3
Q6016RH3
Q8016RH3
QK016RH3
Q2016RH4
Q4016RH4
Q6016RH4
Q8016RH4
QK016RH4
Q2016RH6
Q4016RH6
Q6016RH6
Q8016RH6
QK016RH6
Q2016NH3
Q4016NH3
Q6016NH3
Q8016NH3
QK016NH3
Q2016NH4
Q4016NH4
Q6016NH4
Q8016NH4
QK016NH4
Q2016NH6
Q4016NH6
Q6016NH6
Q8016NH6
QK016NH6
Q2025NH6
Q4025NH6
Q6025NH6
Q8025NH6
QK025NH6
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
200
400
600
200
400
600
800
1000
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
20
20
20
20
20
35
35
35
35
35
80
80
80
80
80
80
80
80
80
80
50
50
50
50
50
50
100
100
100
100
100
16 A
Q2025K6
Q4025K6
Q6025K6
Q8025K6
QK025K6
Q2025J6
Q4025J6
Q6025J6
Q8025J6
Q2025R6
Q4025R6
Q6025R6
Q8025R6
QK025R6
25 A
30 A
35 A
Q2035RH5
Q4035RH5
Q6035RH5
Q2035NH5
Q4035NH5
Q6035NH5
Q2040K7
Q4040K7
Q6040K7
Q8040K7
QK040K7
Q2040J7
Q4040J7
Q6040J7
Q8040J7
40 A
See “General Notes” and “Electrical Specification Notes” on page E4 - 5.
I
I
I
P
P
— Holding current (DC); gate open
H
Test Conditions
— RMS on-state current conduction angle of 360°
T(RMS)
di/dt — Maximum rate-of-change of on-state current
— Peak one-cycle surge
TSM
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
— Average gate power dissipation
G(AV)
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
— Peak gate power dissipation; IGT ?ꢁIGTM
GM
t
— Gate controlled turn-on time; IGT = 300 mA with 0.1 µs rise time
gt
2
I t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
V
V
V
— Repetitive peak blocking voltage
DRM
for fusing
— DC gate trigger voltage; VD = 12 V dc
GT
I
I
— Peak off-state current gate open; VDRM = maximum rated value
— DC gate trigger current in specific operating quadrants;
VD = 12 V dc
DRM
— Peak on-state voltage at maximum rated RMS current
TM
GT
I
— Peak gate trigger current
GTM
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E4 - 4
©2002 Teccor Electronics
Thyristor Product Catalog