BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYV26A to E
BYV26F and G
V
F
forward voltage
BYV26A to E
BYV26F and G
V
(BR)R
reverse avalanche breakdown
voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
I
R
reverse current
V
R
= V
RRMmax
; see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.16
t
rr
reverse recovery time
BYV26A to C
BYV26D and E
BYV26F and G
C
d
diode capacitance
BYV26A to C
BYV26D and E
BYV26F and G
SYMBOL
dI
R
--------
dt
PARAMETER
CONDITIONS
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A;
see Figs 14 and 15
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
MIN.
−
−
−
−
TYP.
−
−
−
−
MAX.
1.3
1.3
2.50
2.15
V
V
V
V
UNIT
200V-1400V
0.65A-1.05
−
−
−
−
−
−
MIN.
−
−
−
45
40
35
TYP.
30
75
150
−
−
−
MAX.
ns
ns
ns
pF
pF
pF
UNIT
maximum slope of reverse recovery when switched from
I
F
= 1 A to V
R
≥
30 V and
current
dI
F
/dt =
−1
A/µs;
BYV26A to C
see Fig.21
BYV26D and E
BYV26F and G
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
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