BYG50D THRU BYG50M
Controlled avalanche rectifiers
200V-1000V
0.7A-2.1A
SYMBOL
E
RSM
PARAMETER
non-repetitive peak reverse avalanche
energy
BYG50D to J
BYG50K and M
CONDITIONS
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
MIN.
MAX.
UNIT
−
−
−65
see Fig.4
−65
10
7
+175
+175
mJ
mJ
°C
°C
T
stg
T
j
storage temperature
junction temperature
ELECTRICAL CHARACTERISTICS
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYG50D
BYG50G
BYG50J
BYG50K
BYG50M
CONDITIONS
I
F
= 1 A; T
j
= T
j max;
see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
MIN.
−
−
TYP.
−
−
MAX.
0.85
1.00
V
V
UNIT
300
500
700
900
1100
V
R
= V
RRMmax
; see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.6
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.8
−
−
−
−
−
−
−
−
−
−
2
1
100
−
−
−
−
−
V
V
V
V
V
µA
µA
I
R
t
rr
reverse current
reverse recovery time
−
µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm,
see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
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