BYG21K THRU BYG21M
Fast Silicon Mesa SMD Rectifier
800V-1000V
1.5A
FEATURES
D
D
D
D
D
D
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG21K
BYG21M
Symbol
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
°
C
E
R
Value
800
1000
30
1.5
–55...+150
20
Unit
V
V
A
A
°
C
mJ
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
I
F
=1A
I
F
=1.5A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.5
1.6
1
10
120
Unit
V
V
m
A
m
A
ns
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