BYG10D THRU BYG10M
Silicon Mesa SMD Rectifier
200V-1000V
1.5A
FEATURES
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
°
C
E
R
Value
200
400
600
800
1000
30
1.5
–55...+150
20
Unit
V
V
V
V
V
A
A
°
C
mJ
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
I
F
=1A
I
F
=1.5A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.1
1.15
1
10
4
Unit
V
V
m
A
m
A
m
s
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TAYCHIPST [ SHENZHEN TAYCHIPST ELECTRONIC CO., LTD ]
