TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E
−
SEPTEMBER 2007
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Output current, I
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10 mA
Duration of short-circuit current at (or below) 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25°C
to 85°C
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25°C
to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) . . . . . . . . . . . . . . . . . . . . 260°C
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
Supply voltage, V
DD
Operating free-air temperature, T
A
2.7
0
MAX
5.5
70
UNIT
V
°C
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p
= 470 nm, R
L
= 10 k
Ω
(unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
V
D
V
OM
V
O
α
VD
Dark voltage
Maximum output voltage swing
Output voltage
Temperature coefficient of dark voltage (V
D
)
E
e
= 0
V
DD
= 4.5 V,
V
DD
= 4.5 V,
T
A
= 0°C to 70°C
λ
p
= 428 nm, see Notes 4 and 8
N
e
Irradiance responsivity
λ
p
= 470 nm, see Notes 5 and 8
λ
p
= 565 nm, see Notes 6 and 8
λ
p
= 645 nm, see Notes 7 and 8
PSRR
I
DD
Power supply rejection ratio
pp y j
Supply current
f
ac
= 100 Hz, see Note 9
f
ac
= 1 kHz, see Note 9
E
e
= 1.54
μW/cm
2
,
λ
p
= 470 nm, Note 5
No Load
R
L
= 10 kΩ
4
1.6
TEST CONDITIONS
MIN
0
4.49
4.2
2
−15
1.18
1.30
1.58
1.68
55
35
1.9
3.5
dB
dB
mA
V/(μW/cm
V/( W/cm
2
)
2.4
TYP
MAX
15
UNIT
mV
V
V
μV/°C
E
e
= 1.54
μW/cm
2
,
λ
p
= 470 nm, Note 5
NOTES: 2. Measured with R
L
= 10 kΩ between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength
λ
p
= 428 nm,
spectral halfwidth
Δλ�½
= 65 nm.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength
λ
p
= 470 nm,
spectral halfwidth
Δλ�½
= 35 nm.
6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength
λ
p
= 565 nm,
spectral halfwidth
Δλ�½
= 28 nm.
7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength
λ
p
= 645 nm,
spectral halfwidth
Δλ�½
= 25 nm.
8. Irradiance responsivity is characterized over the range V
O
= 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V
O
versus
Irradiance E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
9. Power supply rejection ratio PSRR is defined as 20 log (ΔV
DD
(f)/ΔV
O
(f)) with V
DD
(f = 0) = 5 V and V
O
(f = 0) = 2 V.
Copyright
E
2007, TAOS Inc.
r
r
The
LUMENOLOGY
r
Company
2
www.taosinc.com
TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
