TSL2550
AMBIENT LIGHT SENSOR
WITH SMBus INTERFACE
TAOS029L
−
OCTOBER 2007
Electrical Characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
V
OL
SMBus output low voltage
I
O
= 50
μA
I
O
= 4 mA
Active, VSMBCLK and VSMDATA = V
DD,
V
DD
= 3.3 V
±
5%
Power down, VSMBCLK and VSMDATA =
V
DD,
V
DD
= 3.3 V
±
5%
VI = V
DD
VI = 0
0.35
TEST CONDITIONS
MIN
TYP
0.01
0.4
0.6
10
5
−5
MAX
UNIT
V
mA
μA
μA
μA
I
DD
I
IH
I
IL
Supply current
High level input current
Low level input current
Operating Characteristics, V
DD
= 3.3 V, T
A
= 255C (unless otherwise noted) (see Notes 2, 3, 4)
PARAMETER
TEST CONDITIONS
E
e
= 0
ADC count value standard mode
value,
λ
p
= 640 nm
E
e
= 72
μW/cm
2
λ
p
= 940 nm
E
e
= 140
μW/cm
2
E
e
= 0
ADC count value extended mode
value,
λ
p
= 640 nm
E
e
= 72
μW/cm
2
λ
p
= 940 nm
E
e
= 140
μW/cm
2
ADC count value ratio: Ch1/Ch0,
standard mode
λ
p
= 640 nm, E
e
= 72
λ
p
= 640 nm
E
e
= 72
μW/cm
2
λ
p
= 940 nm
E
e
= 140
μW/cm
2
Fluorescent light source: 300 Lux
R
v
Illuminance responsivity standard mode
responsivity,
Incandescent light source: 50 Lux
(Sensor Lux) / (actual Lux), standard mode
(Note 5)
Fluorescent light source: 300 Lux
Incandescent light source: 50 Lux
μW/cm
2
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
0.65
0.5
λ
p
= 940 nm, E
e
= 140
μW/cm
2
CHANNEL
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
Ch0
Ch1
0.070
0.70
155
16
155
139
0.106
0.88
11.1
1.2
5.7
5
2.8
0.23
19
13
1
1
1.35
1.5
counts/
lux
counts/
(μW/
cm
2
)
0.175
1.20
511
639
799
85
799
703
1
1
counts
1039
MIN
TYP
MAX
1
1
959
counts
UNIT
R
e
Irradiance responsivity standard mode
responsivity,
NOTES: 3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs
and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production.
4. The 640 nm irradiance E
e
is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength
λp
= 640 nm and spectral halfwidth
Δλ�½
= 17 nm.
5. The 940 nm irradiance E
e
is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength
λp
= 940 nm and spectral halfwidth
Δλ�½
= 40 nm.
6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC
count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual
Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with
fluorescent or incandescent light sources.
The
LUMENOLOGY
r
Company
r
r
Copyright
E
2007, TAOS Inc.
www.taosinc.com
3
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