欢迎访问ic37.com |
会员登录 免费注册
发布采购

TSL1402R 参数 Datasheet PDF下载

TSL1402R图片预览
型号: TSL1402R
PDF下载: 下载PDF文件 查看货源
内容描述: 256 】 1线性传感器阵列HOLD [256 】 1 LINEAR SENSOR ARRAY WITH HOLD]
分类和应用: 传感器
文件页数/大小: 14 页 / 226 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
 浏览型号TSL1402R的Datasheet PDF文件第1页浏览型号TSL1402R的Datasheet PDF文件第2页浏览型号TSL1402R的Datasheet PDF文件第3页浏览型号TSL1402R的Datasheet PDF文件第4页浏览型号TSL1402R的Datasheet PDF文件第6页浏览型号TSL1402R的Datasheet PDF文件第7页浏览型号TSL1402R的Datasheet PDF文件第8页浏览型号TSL1402R的Datasheet PDF文件第9页  
TSL1402R
256
×
1 LINEAR SENSOR ARRAY WITH HOLD
TAOS041F
APRIL 2007
Electrical Characteristics at f
clock
= 1 MHz, V
DD
= 5 V, T
A
= 25°C,
λ
p
= 640 nm, t
int
= 5 ms,
R
L
= 330
Ω,
E
e
= 11
μW/cm
2
(unless otherwise noted) (see Note 3)
PARAMETER
V
out
V
drk
PRNU
Analog output voltage (white, average over 256 pixels)
Analog output voltage (dark, average over 256 pixels)
Pixel response nonuniformity
Nonlinearity of analog output voltage
Output noise voltage
R
e
V
sat
SE
DSNU
IL
I
DD
I
IH
I
IL
C
i
C
i
Responsivity
Analog output saturation voltage
Saturation exposure
Dark signal nonuniformity
Image lag
Supply current
High-level input current
Low-level input current
Input capacitance, SI
Input capacitance, CLK
E
e
= 0
See Note 5
See Note 6
See Note 7
See Note 8
V
DD
= 5 V, R
L
= 330
Ω
V
DD
= 3 V, R
L
= 330
Ω
V
DD
= 5 V, See Note 9
V
DD
= 3 V, See Note 9
All pixels, E
e
= 0, See Note 10
See Note 11
V
DD
= 5 V, E
e
= 0
V
DD
= 3 V, E
e
= 0
V
I
= V
DD
V
I
= 0
5
10
25
4.5
2.5
±
0.4%
1
35
4.8
2.8
136
78
0.04
0.5%
6
5
9
8
10
10
mA
μA
μA
pF
pF
0.12
45
mVrms
V/
(μJ/cm
2
)
V
nJ/cm
2
V
TEST CONDITIONS
See Note 4
MIN
1.6
0
TYP
2
0.1
MAX
2.4
0.2
±
10%
UNIT
V
V
NOTES: 3. All measurements made with a 0.1
μF
capacitor connected between V
DD
and ground.
4. The array is uniformly illuminated with a diffused LED source having a peak wavelength of 640 nm.
5. PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of the
device under test when the array is uniformly illuminated at the white irradiance level. PRNU includes DSNU.
6. Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent
of analog output voltage (white).
7. RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period.
8. R
e(min)
= [V
out(min)
V
drk(max)
]
÷
(E
e
×
t
int
)
9. SE(min) = [V
sat(min)
V
drk(min)
]
×
〈E
e
×
t
int
)
÷
[V
out(max)
V
drk(min)
]
10. DSNU is the difference between the maximum and minimum output voltage for all pixels in the absence of illumination.
11. Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining after
a pixel is exposed to a white condition followed by a dark condition:
IL
+
V out (IL)
*
V drk
V out (white)
*
V drk
100
Timing Requirements (see Figure 1 and Figure 2)
MIN
t
su(SI)
t
h(SI)
t
w
t
r
, t
f
t
qt
Setup time, serial input (see Note 12)
Hold time, serial input (see Note 12 and Note 13)
Pulse duration, clock high or low
Input transition (rise and fall) time
Pixel charge transfer time
20
0
50
0
20
500
NOM
MAX
UNIT
ns
ns
ns
ns
μs
NOTES: 12. Input pulses have the following characteristics: t
r
= 6 ns, t
f
= 6 ns.
13. SI must go low before the rising edge of the next clock pulse.
The
LUMENOLOGY
r
Company
r
r
Copyright
E
2007, TAOS Inc.
www.taosinc.com
5