TCS3103, TCS3104
LIGHT-TO-VOLTAGE COLOR SENSOR
TAOS108B − JULY 2010
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C
ESD tolerance, human body model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 V
Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Solder conditions in accordance with JEDEC J−STD−020A, maximum temperature . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
Supply voltage, V
DD
Operating free-air temperature, T
A
Input low voltage on MFP pin, V
IL
Input high voltage on MFP pin, V
IH
Load capacitance, C
L
V
DD
= 5 V
V
DD
= 5 V
V
DD
= 5 V
4.5
−30
−0.5
3.5
NOM
5
MAX
5.5
70
1.5
5.5
100
UNIT
V
°C
V
V
pF
Electrical Characteristics V
DD
= 5 V, T
A
= 255C, R
L
= 10 kW (unless otherwise noted)
PARAMETER
V
D
V
OM
I
DD
R
eR
Dark voltage, V
OR
, V
OG
, V
OB
Maximum output voltage
Supply current
E
e
= 0
V
DD
= 5 V
V
DD
= 5 V, E
e
= 0
λ
p
= 470 nm, Gain select = 1
×
Irradiance responsivity, V
OR
λ
p
= 524 nm, Gain select = 1
×
λ
p
= 640 nm, Gain select = 1
×
λ
p
= 470 nm, Gain select = 1
×
R
eG
Irradiance responsivity, V
OG
λ
p
= 524 nm, Gain select = 1
×
λ
p
= 640 nm, Gain select = 1
×
λ
p
= 470 nm, Gain select = 1
×
R
eB
Irradiance responsivity, V
OB
Gain scaling, 1
×
to 2
×
Gain scaling, 1
×
to 4
×
T
c
Temperature coefficient of output voltage
λ
p
≤
700 nm, −30°C
≤
T
A
≤
70°C
λ
p
= 524 nm, Gain select = 1
×
λ
p
= 640 nm, Gain select = 1
×
1.9
3.8
0.15
0.18
0.3
TEST CONDITIONS
MIN
0
4.8
270
0.02
0.09
0.4
0.13
0.25
0.06
0.2
0.13
0.12
2
4
±
360
2.1
4.2
ppm/°C
0.25
mV/
V/
(μW/cm
2)
0.31
mV/
V/
(μW/cm
2)
0.5
mV/
V/
(μW/cm
2)
500
TYP
MAX
10
UNIT
mV
V
μA
Dynamic Characteristics, V
DD
= 5 V, T
A
= 255C, R
L
= 10 kW (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Gain select = 1
×
t
r
Output pulse rise time, 10% to 90% of final value
Gain select = 2
×
Gain select = 4
×
Gain select = 1
×
t
f
Output pulse fall time, 90% to 10% of final value
Integrated noise voltage
t
PZX
Propagation delay, output active
r
r
www.taosinc.com
3
Gain select = 2
×
Gain select = 4
×
f = DC to 1 kHz, E
e
= 0
V
DD
ramp 0 V to 5 V
MIN
TYP
12
24
40
15
28
44
200
50
MAX
UNIT
μs
μs
μs
μs
μs
μs
μVrms
ms
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LUMENOLOGY
r
Company
Copyright
E
2010, TAOS Inc.
TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
