CD54HC670, CD74HC670, CD74HCT670
DC Electrical Specifications (Continued)
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
V
CC
PARAMETER
SYMBOL
V (V)
I
(mA)
O
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
I
Quiescent Device
Current
I
V
GND
or
0
6
-
-
8
-
80
-
160
µA
CC
CC
Three- State Leakage
Current
V
or V
V
=
or
6
-
-
±0.5
-
±5.0
-
±10
µA
IL
IH
O
V
CC
GND
HCT TYPES
High Level Input
Voltage
V
-
-
-
-
4.5 to
5.5
2
-
-
-
-
-
0.8
-
2
-
-
0.8
-
2
-
-
0.8
-
V
V
V
IH
Low Level Input
Voltage
V
4.5 to
5.5
IL
High Level Output
Voltage
CMOS Loads
V
V
V
or V
-0.02
4.5
4.5
4.5
4.5
4.4
4.4
4.4
OH
IH
IH
IL
High Level Output
Voltage
TTL Loads
-6
0.02
6
3.98
-
-
-
-
3.84
-
3.7
-
V
V
V
Low Level Output
Voltage
CMOS Loads
V
or V
-
-
0.1
0.26
-
-
0.1
0.33
-
-
0.1
0.4
OL
IL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
I
V
and
0
0
5.5
5.5
5.5
-
-
-
±0.1
8
-
-
-
±1
80
-
-
-
±1
µA
µA
µA
I
CC
GND
Quiescent Device
Current
I
V
or
-
-
160
±10
CC
CC
GND
Three- State Leakage
Current
V
or V
V =
O
±0.5
±5.0
IL
IH
V
or
CC
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 4)
V
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
CC
-2.1
NOTE:
4. For dual-supply systems theoretical worst case (V = 2.4V, V
I
= 5.5V) specification is 1.8mA.
CC
HCT Input Loading Table
INPUT
WE
UNIT LOADS
0.3
0.2
0.4
1.5
0.15
0.4
0.7
WA0
WA1
RE
DATA
RA0
RA1
NOTE: Unit Load is ∆I limit specific in DC Electrical Specifications
CC
o
Table, e.g., 360µA max. at 25 C.
4
TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
