CC1110Fx / CC1111Fx
1.8V REGULATED
UNREGULATED
VOLT
BOD RESET ASSERT
POR RESET DEASSERT RISING VDD
POR RESET ASSERT FALLING VDD
0
POR OUTPUT
X
X
X
BOD RESET
POR RESET
X
X
X
Figure 18: Power-On-Reset and Brown Out Detector Operation
13.3 Flash Controller
Note the difference in addressing the flash
memory; when accessed by the CPU to read
code or data, the flash memory is byte-
addressable. When accessed by the Flash
Controller, the flash memory is word-
addressable, where a word consists of 16 bits.
The CC1110Fx/CC1111Fx contains 8, 16 or 32 KB
flash memory for storage of program code.
The flash memory is programmable from the
user software and through the debug interface.
See Table 27 on page 34 for flash memory
size options.
The next sections describe the procedures for
flash write and flash page erase in detail.
The Flash Controller handles writing to the
embedded flash memory and erasing of the
same memory. The embedded flash memory
consists of 8, 16, or 32 pages (each page is
1024 bytes) depending on the total flash size.
13.3.2 Flash Write
Data is written to the flash memory by using a
program command initiated by writing a 1 to
FCTL.WRITE. Flash write operations can
program any number of words in the flash
memory, single words or block of words in
sequence starting at the address set by
FADDRH:FADDRL. A bit in a word can be
changed from 1 to 0, but not from 0 - 1 (writing
a 1 to a bit that is 0 will be ignored). The only
way to change a 0 to a 1 is by doing a page
erase or chip erase through the debug
interface, as the erased bits are set to 1.
The Flash Controller has the following
features:
• 16-bit word programmable
• Page erase
• Lock bits for write-protection and code
security
• Flash page erase time: 20 ms
• Flash chip erase time: 200 ms
• Flash write time (2 bytes): 20 µs
• Auto power-down during low-frequency
CPU clock read access (divided clock
source, CLKCON.CLKSPD)
A write operation is performed using one out of
two methods;
13.3.1 Flash Memory Organization
• Through DMA transfer
The flash memory is divided into 8, 16, or 32
flash pages consisting of 1 KB each. A flash
page is the smallest erasable unit in the
memory, while a 16-bit word is the smallest
writable unit that may be addressed through
the Flash Controller.
• Through CPU SFR access
The DMA transfer method is the preferred way
to write to the flash memory.
A write operation is initiated by writing a 1 to
FCTL.WRITE. The address to start writing at is
given by FADDRH:FADDRL. During each single
write operation FCTL.SWBSY is set high.
During a write operation, the data written to the
FWDATA register is forwarded to the flash
memory. The flash memory is 16-bit word-
programmable, meaning data is written as 16-
bit words. The first byte written to FWDATA is
the LSB of the 16-bit word. The actual writing
When performing write operations, the flash
memory is word-addressable using a 14-bit
address written to the address registers
FADDRH:FADDRL.
When performing page erase operations, the
flash memory page to be erased is addressed
through the register bits FADDRH[5:1].
SWRS033E
Page 85 of 239
TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
