SMD General Purpose Transistor (NPN)
MMBT3904
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Min.
40
70
Max.
-
-
300
-
-
-
-
-
0.2
0.3
0.85
0.95
50
50
-
4.0
8.0
5.0
35
35
200
50
ns
V
V
V
V
Unit
Conditions
V
CE
=1V,
I
C
=0.1mA
V
CE
=1V,
I
C
=1mA
V
CE
=1V,
I
C
=10mA
V
CE
=1V,
I
C
=50mA
V
CE
=1V,
I
C
=100mA
I
C
=10µA,
I
E
=0
I
C
=1mA,
I
B
=0
I
E
=10µA,
I
C
=0
I
C
=10mA,
I
B
=1mA
I
C
=50mA,
I
B
=5mA
I
C
=10mA,
I
B
=1mA
I
C
=50mA,
I
B
=5mA
V
EB
=3V, V
CE
=30V
V
EB
=3V, V
CE
=30V
V
CE
=20V,
I
C
=10mA,
f
=100MHz
V
CB
=5V,
f
=1.0MHz,
I
E
=0
V
EB
=0.5V,
f
=1.0MHz,
I
C
=0
V
CE
=5V, I
C
=100µA,
R
S
=1kΩ,
f
=10Hz to 15.7KHz
I
B1
=1mA
I
C
=10mA
I
B1
=
I
B2=
1mA
I
C
=10mA
h
FE
D.C. Current Gain
100
60
30
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CEV
I
EBV
f
T
C
CBO
C
EBO
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
60
40
6.0
-
-
0.65
-
-
-
300
-
-
-
-
-
-
-
Base-Emitter Saturation Voltage
Collector-Emitter Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
V
nA
nA
MHz
pF
pF
dB
t
d
t
r
t
s
t
f
Rev. A/AH 2007-12-22
www.taitroncomponents.com
Page 2 of 3
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