SMD General Purpose Transistor (PNP)
BC856/BC857/BC858
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Min.
Typ.
Max.
Unit
Conditions
-I
CBO
Collector-Emitter Cut-off Current
BC856/7/8, Suffix ‘A’
BC856/7/8, Suffix ‘B’
BC857/8, Suffix ‘C’
-
-
-
-
110
200
420
-
-
90
150
270
180
290
520
0.09
0.25
0.7
0.9
0.65
-
150
4.5
2.0
15
-
-
-
220
450
800
0.3
nA
-V
CB
=30V,
I
E
=0
-V
CE
=5V,
-I
C
=10µA
h
FE
D.C. Current Gain
BC856/7/8, Suffix ‘A’
BC856/7/8, Suffix ‘B’
BC857/8, Suffix ‘C’
-V
CE
=5V,
-I
C
=2mA
-I
C
=10mA,
-I
B
=0.5mA
V
-V
CE(sat)
Collector-Emitter Saturation Voltage
-
-
0.65
-
-I
C
=100mA,
-I
B
=5mA
-I
C
=10mA,
-I
B
=0.5mA
V
-V
BE(sat)
Base-Emitter Saturation Voltage
-
0.6
-
0.75
-I
C
=100mA,
-I
B
=5mA
-V
CE
=5V,
-I
C
=2mA
V
-V
BE(on)
f
T
C
ob
NF
Base-Emitter On Voltage
-
Current Gain-Bandwidth Product
Collector Output Capacitance
Noise Figure
-
-
-
0.82
-
-
10
-V
CE
=5V,
-I
C
=10mA
MHz
pF
dB
-V
CE
=5V,
-I
C
=10mA,
f
=100MHz
-V
CB
=10V,
I
E
=0,
f
=1MHz
-V
CE
=5V, -
I
C
=0.2mA,
R
G
=2KΩ, f=1KHz
Rev. A/AH 2008-05-29
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