BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance , Junction to Ambient
SYMBOL
R
ΘJA
Value
556
UNIT
O
C /W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
EL ECTRICAL CHARACTERISTICS (T
J
=25 C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(I
C
=-10mA, I
B
=0)
BC856A,B
BC857A,B,C V
(BR)
CE0
BC858A,B,C, BC859B,C
Collector - Base Breakdown Voltage
(I
C
=-10µA, I
E
=0)
BC856A,B
BC857A,B,C V
(BR)
CB0
BC858A,B,C, BC859B,C
Emitter - Base Breakdown Voltage
(I
E
=-1µA, I
C
=0)
V
(BR)
EB0
I
EBO
SYMBOL
MIN.
-65
-45
-30
-80
-50
-30
-5.0
-
-
T
J
=150
O
C
DC Current Gain
(I
C
=-10µA, V
CE
=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
h
FE
(I
C
=-2.0mA, V
CE
=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector – Emitter Saturation Voltage (I
C
=-10mA, I
B
=-0.5mA)
V
CE(SAT)
(I
C
=-100mA, I
B
=-5.0mA)
Base – Emitter Saturation Voltage
(I
C
=-10mA, I
B
=-0.5mA)
V
BE(SAT)
(I
C
=-100mA, I
B
=-5.0mA)
Base – Emitter On Voltage
(I
C
=-2.0mA, V
CE
=-5.0V)
V
BE(ON)
(I
C
=-10mA, V
CE
=-5.0V)
Collector - Base Capacitance
Current-Gain - Bandwidth Product
F
T
(I
C
=-10mA, V
CE
=-5.0V, f=100MHz)
STAD-JUL.11.2005
PAGE . 2
TYP.
-
-
-
-
-
-
-
-
-
-
90
150
270
MAX.
-
-
-
-
-
-
-
-100
-15
-4.0
-
-
-
UNIT
V
V
V
nA
nA
uA
Emitter-Base Cutoff Current (V
EB
=-5V)
Collector-Base Cutoff Current (V
CB
=-30V, I
E
=0)
I
CBO
-
-
-
-
-
110
200
420
-
-
-
-
-0.60
-
180
290
520
-
-
-0.7
-0.9
-
-
-
220
450
800
-0.3
V
-0.65
-
V
-
-0.75
V
-0.82
4.5
pF
(V
CB
=-10V, I
E
=0, f=1MHz)
C
CB
-
-
200
-
MHz
TAITRON [ TAITRON COMPONENTS INCORPORATED ]
