Small Signal High Voltage Transistor (NPN)
2N5551
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Min.
80
Max.
-
400
-
50
50
0.15
0.2
1.0
1.0
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Transition Frequency
Output Capacitance
180
160
6.0
100
-
-
-
-
300
6.0
V
V
V
MHz
pF
V
nA
nA
V
Unit
Conditions
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CE
=10V, I
C
=10mA,
f=100MHz
V
CB
=10V, f=1.0MHz,
I
E
=0
h
FE*
I
CBO
I
EBO
V
CE(Sat)*
V
BE(Sat)*
V
CBO
V
CEO
V
EBO
f
t
C
ob
*
Pulse
D.C. Current Gain
80
50
Collector Cut–Off Current
Emitter Cut–Off Current
Collector Emitter Saturation Voltage
-
-
-
-
Base Emitter Saturation Voltage
-
Test: Pulse Width=300
µs,
Duty Cycle=2%
Rev. A/AH 2007-11-09
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