THN6501 Series
□ Electrical Characteristics ( TA = 25 ℃ )
Value
Symbol
Parameter
Test Condition
Unit
Min.
Typ. Max.
ICBO
ICEO
IEBO
hFE
fT
VCB = 19 V, IE = 0 mA
VCE = 12 V, IB = 0 mA
0.5
5
uA
uA
uA
Collector Cut-off Current
V
V
EB = 1 V, IC = 0 mA
CE = 3 V, IC = 15 mA
Emitter Cut-off Current
DC Current Gain
0.5
300
80
8
150
9
VCE = 3 V, IC = 30 mA
CB = 10 V, f = 1 MHz
Transition Frequency
Collector to Base Capacitance
GHz
pF
CCB
V
0.85
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 6 V, IC = 15 mA, f = 1 GHz
8
9
9.5
11
|S21|2
Insertion Power Gain
dB
dB
12.5
13
14.5
15
MAG Maximum Available Gain
NFmin Minimum Noise Figure
1.0
dB
rn
Noise Resistance
0.049
12
Ω
10
10
GA
Associated Gain
dB
12.5
27
OIP3
Output 3rd Order Intercept
dBm
Aug.-2005
Rev 2.0
www.tachyonics.co.kr
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