THN6201 series
□
Electrical Characteristics
( T
A
= 25
℃
)
Symbol
I
CBO
I
CEO
I
EBO
h
FE
f
T
C
CB
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Parameter
Collector Cut-off Current
Test Condition
V
CB
= 19 V, I
E
= 0 mA
V
CE
= 12 V, I
B
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 15 mA
V
CE
= 3 V, I
C
= 15 mA
Value
Min. Typ. Max.
-
-
-
80
-
-
-
-
-
200
12
0.47
0.5
5
0.5
300
-
-
-
-
dB
6
7.5
15
8
9.5
17
-
-
-
-
dB
10
11
-
-
-
-
12
13
1.1
1.5
0.12
0.06
-
-
-
dB
-
-
-
-
-
dB
8
9
-
10
11
10
-
-
-
dBm
Ω
GHz
pF
Unit
uA
uA
uA
Collector to Base Capacitance V
CB
= 10 V, f = 1 MHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
11.5 13.5
13
15
|S
21
|
2
Insertion Power Gain
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
MAG
Maximum Available Gain
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
16.5 18.5
NFmin
Minimum Noise Figure
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
rn
Noise Resistance
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 1 GHz
12.5 14.5
14
16
G
A
Associated Gain
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 15 mA, f = 2 GHz
P
1dB, IN
Input 1dB Compression Point
V
CE
= 3 V, I
C
= 15 mA, f = 1 GHz
(Z
S
= Z
Sopt
, Z
L
= Z
Lopt
)
www.tachyonics.co.kr
- 2/13 -
Aug.-2005
Rev 2.0