欢迎访问ic37.com |
会员登录 免费注册
发布采购

TBN6301E 参数 Datasheet PDF下载

TBN6301E图片预览
型号: TBN6301E
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN SILICON RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 224 K
品牌: TACHYONICS [ TACHYONICS CO,. LTD ]
 浏览型号TBN6301E的Datasheet PDF文件第1页浏览型号TBN6301E的Datasheet PDF文件第2页浏览型号TBN6301E的Datasheet PDF文件第4页浏览型号TBN6301E的Datasheet PDF文件第5页浏览型号TBN6301E的Datasheet PDF文件第6页  
Preliminary Specification
TBN6301 series
Typical Characteristics ( T
A
= 25
, unless otherwise specified)
Power Dissipation
vs. Ambient Temperature
200
Reverse Transfer Capacitance
vs. Collector to Base Voltage
Reverse Transfer Capacitance, C
re
(pF)
1.4
f = 1 MHz
Collector Power Dissipation, P
C
(mW)
150
1.2
100
1.0
50
0
0
25
50
75
100
o
125
150
0.8
0
1
2
3
4
5
6
7
Ambient Temperature, T
A
( C)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
400
350
300
V
CE
= 3 V
30
25
20
15
10
5
Collector Current
vs. Base to Emitter Voltage
V
CE
= 3 V
250
200
150
100
50
0
0.1
Collector Current, I
C
(mA)
1
10
100
DC Current Gain, h
FE
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
http://www.tachyonics.co.kr
Dec. 2005.
Page 3 of 6
Rev. 1.0