SILICON BRIDGE RECTIFIERS
RBV2500 - RBV2510
RBV25
PRV : 50 - 1000 Volts
Io : 25 Amperes
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
Æ 3.2 ± 0.1
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
+
~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
10
7.5 7.5
2.0 ± 0.2
0.7 ± 0.1
±0.2 ±0.2 ±0.2
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in millimeters
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
2500
50
RBV
2501
100
RBV
2502
200
RBV
2504
400
RBV
2506
600
RBV
2508
800
RBV
2510
1000
SYMBOL
RATING
UNIT
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
A
35
50
70
140
200
280
400
25
420
600
560
800
700
100
1000
Maximum DC Blocking Voltage
IF(AV)
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
300
A
I2t
VF
A2S
V
375
1.1
Maximum Forward Voltage per Diode at IF = 12.5 A
10
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
mA
200
1.45
IR(H)
Ta = 100 °C
mA
°C/W
°C
RqJC
TJ
- 40 to + 150
- 40 to + 150
Operating Junction Temperature Range
Storage Temperature Range
TSTG
°C
Notes :
1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2 Rev. 03 : September 9, 2005
SYNSEMI [ SYNSEMI, INC. ]
