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1S1885 参数 Datasheet PDF下载

1S1885图片预览
型号: 1S1885
PDF下载: 下载PDF文件 查看货源
内容描述: 硅整流二极管 [SILICON RECTIFIER DIODES]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 30 K
品牌: SYNSEMI [ SYNSEMI, INC. ]
 浏览型号1S1885的Datasheet PDF文件第2页  
1S1885 ~ 1S1888
PRV : 100 ~ 600 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current Ta = 65
°C
Maximum Peak One Cycle Surge Forward Current
SYMBOL 1S1885
V
RRM
I
F
I
FSM
100
1S1886
200
1S1887
400
1S1888
600
UNIT
V
A
A
1.0
60 (50Hz)
66 (60Hz)
(Non-repetitive)
Maximum Forward Voltage at I
F
= 1.5 A.
Maximum Repetitive Peak Reverse Current
(V
RRM
= Rated)
Maximum Thermal Resistance (Junction to Ambient)
Junction Temperature Range
Storage Temperature Range
V
F
I
R
I
R(H)
R
th (j-a)
T
J
T
STG
1.2
10
400 (Tj = 150 °C)
100
- 40 to + 150
- 40 to + 150
V
μA
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005