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1A1 参数 Datasheet PDF下载

1A1图片预览
型号: 1A1
PDF下载: 下载PDF文件 查看货源
内容描述: 硅整流二极管 [SILICON RECTIFIER DIODES]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 25 K
品牌: SYNSEMI [ SYNSEMI, INC. ]
 浏览型号1A1的Datasheet PDF文件第2页  
1A1 ~ 1A7
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
High current capability
High reliability
Low reverse current
Low forward voltage drop
SILICON RECTIFIER DIODES
R-1
0.099 (2.51)
0.95 (2.42)
1.00 (25.4)
MIN.
0.138 (3.5)
0.114 (2.9)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram
0.024 (0.6)
0.020 (0.5)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 A.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Junction Capacitance (1)
Typical Thermal Resistance (2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
SYMBOL
1A1
50
35
50
1A2
100
70
100
1A3
200
140
200
1A4
400
280
400
1.0
1A5
600
420
600
1A6
800
560
800
1A7
1000
700
1000
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
30
1.1
5.0
50
15
50
- 65 to + 125
- 65 to + 150
A
V
µA
µA
pF
°C/W
°C
°C
Ta = 25
°C
Ta = 100
°C
(2) Thermal Resistance from Junction to Ambient 0.375" (9.5mm) Lead Length
Page 1 of 2
Rev. 02 : January 10, 2004