SPP4435B
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4435B is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-30V/-9.2A,R
DS(ON)
= 24mΩ@V
GS
=- 10V
-30V/-7.0A,R
DS(ON)
= 30mΩ@V
GS
=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/12/26
Ver.1
Page 1