SPP3407B
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-30
V
-0.8
-2.5
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
±100
-1
nA
uA
Zero Gate Voltage Drain Current
IDSS
-10
TJ=55℃
VDS≦-5V,VGS=-10V
On-State Drain Current
ID(on)
-10
A
VGS=- 10V,ID=-4.0A
VGS=-4.5V,ID=-3.2A
0.062
0.085
0.070
0.095
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-5.0V,ID=-4.0A
IS=-1.0A,VGS=0V
10
S
VSD
-0.8
-1.2
18
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
10
1.6
3.0
450
95
55
8
VDS=-15V,VGS=-10V
ID= -3.5A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=-15V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
18
18
50
35
Turn-On Time
Turn-Off Time
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
8
nS
td(off)
tf
25
25
2009/02/25 Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
