SPP2319
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2319 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-40V/-3.0A,R
DS(ON)
= 96mΩ@V
GS
=- 10V
-40V/-2.8A,R
DS(ON)
=110mΩ@V
GS
=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION ( SOT-23-3L )
PART MARKING
2009/07/15
Ver.1
Page 1