SPP2327
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-50V, I
D
=-0.5A,
V
GS
=-10V, R
G
=3.3Ω
V
DS
=-50V,V
GS
=-10V
I
D
=-1A
9.3
1.75
1.25
553
29
20
2
18.4
19.6
19.5
nS
pF
nC
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±20V
V
DS
=-80V,V
GS
=0V,
T
J
=25℃
V
DS
=-80V,V
GS
=0V
T
J
=55℃
V
DS=
V
GS
=0V
V
GS
= -10V,I
D
=-1A
V
GS
= -4.5V,I
D
=-0.5A
V
DS
=-10V,I
D
=-1A
I
S
=-1A,V
GS
=0V
-
0.52
0.6
2.9
-1.2
-110
-1
-1.5
-2.5
±100
10
uA
100
-1.5
0.65
0.75
A
Ω
Ω
S
V
V
nA
Symbol
Conditions
Min.
Typ
Max.
Unit
V
DS
=-15,V
GS
=0V
f=1MHz
2013/09/08
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
