SPP2311
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2311 is the P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
FEATURES
P-Channel
-20V/0.45A,R
DS(ON)
= 0.65Ω@V
GS
=-4.5V
-20V/0.35A,R
DS(ON)
= 0.90Ω@V
GS
=-2.5V
-20V/0.25A,R
DS(ON)
= 1.5Ω@V
GS
=-1.8V
-20V/0.25A,R
DS(ON)
= 3.0Ω@V
GS
=-1.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION( SOT-23 )
PART MARKING
2013/10/18
Ver.1
Page 1