SPP2301W
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
=-20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
T
J
=55℃
V
DS
≦-5V,V
GS
=-4.5V
V
DS
≦-5V,V
GS
=-2.5V
V
GS
=-4.5V,I
D
=-2.4A
V
GS
=-2.5V,I
D
=-2.0A
V
DS
=-5V,I
D
=-2.8A
I
S
=-1.6A,V
GS
=0V
-20
-0.45
-1.5
±100
-1
-10
-6
-3
0.128
0.188
6.5
-0.8
-1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-6V,V
GS
=-4.5V
I
D
≡-2.4A
V
DS
=-6V,V
GS
=0V
f=1MHz
4.8
0.75
1.3
35
150
60
10
8
nC
pF
20
45
55
50
ns
V
DD
=-6V,R
L
=6Ω
I
D
≡-1.0A,V
GEN
=-4.5V
R
G
=6Ω
32
38
30
2011/03/10
Ver.1
Page 3