SPP2301
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
-20V/-2.8A,R
DS(ON)
=120mΩ@V
GS
=-4.5V
-20V/-2.0A,R
DS(ON)
=170mΩ@V
GS
=-2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2007/02/02
Ver.3
Page 1