SPP2095
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-20
V
-0.32
-0.8
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VGS=-4.5V,ID=-6.0A
VGS=-2.5V,ID=-3.6A
VGS=-1.8V,ID=-2.0A
±100
-1
nA
uA
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
IDSS
-5
0.055
0.072
0.092
0.065
0.085
0.105
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-5V,ID=-2.8A
IS=-6A,VGS=0V
6
S
VSD
-0.8
-1.2
8
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
4.8
1.0
1.0
485
85
VDS=-10V,VGS=-4.5V
ID≡-8.0A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
VDS=-10V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
40
10
16
23
25
20
Turn-On Time
Turn-Off Time
VDD=-10V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
13
ns
td(off)
tf
18
15
2006/03/16 Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
