SPP1433
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,R
L
=15Ω
I
D
≡-1.0A,V
GEN
=-10V
R
G
=6Ω
V
DS
=-15V,V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=-30V,V
GS
=0V
V
DS
=-30V,V
GS
=0V
T
J
=85℃
V
DS
= -5V,V
GS
=-4.5V
V
GS
=-10V,I
D
=-2.8A
V
GS
=-4.5V,I
D
=-2.5A
V
DS
=-10V,I
D
=-2.8A
I
S
=-1.2A,V
GS
=0V
-30
-1.0
-3.0
±100
-1
-5
-4
0.090
0.125
4
-0.8
5.8
0.8
1.5
226
87
19
9
9
18
6
20
20
35
20
0.110
0.140
-1.2
10
V
nA
uA
A
Ω
S
V
V
DS
=-15V,V
GS
=-10V
I
D
≡-2.5A
nC
pF
ns
2006/03/20
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
