SPP1023
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
-20
V
-0.35
-0.8
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
±100
-1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
-5
TJ=55℃
ID(on) VDS≤ -4.5V,VGS =-5V
-0.7
A
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
0.42
0.58
0.75
0.52
0.70
0.95
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=-10V,ID=-0.25A
IS=-0.15A,VGS=0V
0.4
S
VSD
-0.8
-1.2
2.0
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
td(on)
tr
1.5
0.3
0.35
5
VDS=-10V,VGS=-4.5V ,ID
≡-0.6A
nC
ns
10
25
15
1.8
Turn-On Time
Turn-Off Time
VDD=-10V,RL=10Ω ,
ID≡-0.4A
VGEN=-4.5V ,RG=6Ω
15
td(off)
tf
8
1.4
2007/10/31 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
