SPP1073
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=-250uA
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-10V,R
L
=10Ω ,
I
D
≡-0.4A
V
GEN
=-4.5V ,R
G
=6Ω
V
DS
=0V,V
GS
=±12V
V
DS
=-24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
T
J
=55℃
V
DS
≤
-4.5V,V
GS
=-5V
V
GS
=-4.5V,I
D
=-0.45A
V
GS
=-2.5V,I
D
=-0.35A
V
GS
=-1.8V,I
D
=-0.25A
V
DS
=-10V,I
D
=-0.25A
I
S
=-0.15A,V
GS
=0V
-30
-0.35
-1.0
±30
-1
-5
-0.7
0.65
0.90
1.50
0.4
-0.8
1.5
0.3
0.35
5
15
8
1.4
10
25
15
1.8
-1.2
2.0
V
uA
uA
A
Ω
S
V
V
DS
=-10V,V
GS
=-4.5V ,I
D
≡-0.6A
nC
ns
2013/11/20
Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
