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SPN9910T251TGB 参数 Datasheet PDF下载

SPN9910T251TGB图片预览
型号: SPN9910T251TGB
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 8 页 / 218 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
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SPN9910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN9910T252RGB
SPN9910T251TGB
Package
TO-252
TO-251
Part
Marking
SPN9910
SPN9910
SPN9910T252RGB: Tape Reel ; Pb – Free; Halogen – Free
SPN9910T251TGB: Tube ; Pb – Free; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
)
Pulsed Drain Current
Avalanche Current
Power Dissipation
T
A
=25℃
T
A
=25℃
T
A
=100℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
P
D
EAS
T
J
T
STG
R
θJA
Typical
60
±20
60
47
120
38
40
123
-55/150
-55/150
62
Unit
V
V
A
A
A
W
mJ
℃/W
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.1mH , I
AS
= 38A , V
DD
= 25V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
2011 / 08 / 22
Ver.1
Page 2