SPN8878
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
30
V
1.0
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
±100
1
nA
uA
Zero Gate Voltage Drain Current
IDSS
5
TJ=85℃
On-State Drain Current
ID(on)
VDS≥5V,VGS =10V
40
15
A
VGS= 10V,ID=20A
VGS=4.5V,ID=15A
0.010
0.013
0.012
0.017
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=20A
IS=40A,VGS =0V
S
VSD
0.8
1.5
42
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
28
6
VDS=15V,VGS=10V
ID= 50A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
5
1600
285
140
9
VDS=15VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
15
25
30
20
Turn-On Time
Turn-Off Time
VDD=15V,RL=0.3Ω
ID≡50A,VGEN=10V
RG=1Ω
15
nS
td(off)
tf
20
12
2009/04/20 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
