SPN8882
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
= 0V , I
D
=250uA
V
GS(th)
V
DS
= V
GS
,I
DS
=250uA
I
GSS
I
DSS
R
DS(on)
gfs
V
SD
V
DS
= 0V,V
GS
= ±20 V
V
DS
= 24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V,
T
J
= 125C
V
GS
= 10V, I
D
= 35A
V
GS
= 4.5V, I
D
= 35A
V
DS
= 15V, I
D
=20 A
I
F
= 40 A,V
GS
= 0V
30
0.8
2.4
±100
1
100
0.008
0.012
10
1.0
1.5
0.010
0.014
V
nA
uA
Ω
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15V,V
GS
= 5V,
I
D
=50 A
12
4
5
1500
320
200
8
20
nC
V
GS
= 0V, V
DS
= 25V,
F=1MHz
pF
12
15
30
9
ns
(V
DD
= 15 V,I
D
= 50 A,
V
GS
=10V,R
G
= 2.5Ω)
10
18
6
2007/07/20
Ver.2
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
