SPN8878B
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPN8878BT252RGB
TO-252
SPN8878BT251TGB
TO-251
※
SPN8878BT252RGB : Tape Reel ; Pb – Free ; Halogen - Free
※
SPN8878BT251TGB : Tube ; Pb – Free ; Halogen - Free
SPN8878B
SPN8878B
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Drain Current
TO-252-2L
Power Dissipation
T
A
=25℃
TO-251
PD
EAS
TJ
TSTG
RθJA
T
A
=25℃
T
A
=100℃
Symbol
VDSS
VGSS
ID
IDM
IS
Typical
30
±20
18
13
40
5
40
55
63
-55/150
-55/150
100
W
mJ
℃
℃
℃/W
Unit
V
V
A
A
A
Avalanche Energy with Single Pulse
( Tj=25℃, L = 0.14mH , I
AS
= 30A , V
DD
= 20V. )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
2011/09/27
Ver.5
Page 2